Latest Research Report on GaN Semiconductor Devices Market begins with a deep introduction and then delves broad into specific segments such as raw material, application, end user, and region, policy study, value chain structure, and upcoming trends in particular segments or regions. The report on GaN semiconductor devices prepare a case for investments in different regions based on a practical view of their regulatory outline, manufacturing dynamics, and availability of skills and resources in that region.
The global GaN semiconductor devices market size is estimated to arrive at USD 5.85 billion by 2027. It is projected to develop by 19.8% CAGR from 2020 to 2027.
The expansion of the market can be credited to the rising function of gallium nitride (GaN), in an extensive variety of semiconductor apparatuses. The fast hi-tech development in GaN sourced semiconductors is, moreover, expected to endorse the enlargement of the market.
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The rising requirement for the wireless contact system, mainly in defense communication network, is estimated to impel the requirement for GaN semiconductor devices. Gallium nitride equipment is broadly applied in the progress of amplifiers, like Class C, Class E, and Class F, power amplifiers, mainly utilized in the wireless communication system.
The requirement for the GaN semiconductor apparatuses have augmented the supply equipment for the electric vehicle, for example, EV charging kiosks and charging stations, during the current time. The lesser switching frequency array of GaN devices create them appropriate for utilize in GaN-sourced DC-to-DC transferor. These are utilized in committed charging stations. This is favorable for the expansion of the GaN semiconductor devices market.
Moreover, the globally continuing R&D activities, intended for the better acceptance of GaN devices in electric vehicles, are expected to definitely influence the progress of the market. Nagoya University presented an electric car, in October 2019, that completely makes use of GaN semiconductor devices. It was named as All GaN Vehicle. The automobile is 20% extra proficient than the present electric vehicles, build up with SiC sourced devices.
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